A8QzvN6rFkyOBtCzzOIIAd3sDjYyI7gNzTQV35opYvEipYOcO1yy1ePGdUD5
Current position: Home >> Scientific Research >> Paper Publications

A High Responsivity and Photosensitivity Self-Powered UV Photodetector Constructed by the CuZnS/Ga2O3 Heterojunction

Hits:

Institution:晶体材料研究院(晶体材料全国重点实验室)

Title of Paper:A High Responsivity and Photosensitivity Self-Powered UV Photodetector Constructed by the CuZnS/Ga2O3 Heterojunction

Journal:Advanced Materials Interfaces

First Author:Lv, Zunxian

Document Code:1610220773431885825

Volume:10

Issue:5

Number of Words:4000

Translation or Not:No

Date of Publication:2022-12

Release Time:2024-05-15

Prev One:Rapid epitaxy of 2-inch and high-quality alpha-Ga2O3 films by mist-CVD method

Next One:Investigation on β-Ga2O3 (101) plane with high-density surface dangling bonds