Rapid epitaxy of 2-inch and high-quality alpha-Ga2O3 films by mist-CVD method
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Rapid epitaxy of 2-inch and high-quality alpha-Ga2O3 films by mist-CVD method
Journal:Journal of Semiconductors
First Author:Wang, Xiaojie
Document Code:1678970499690606594
Volume:44
Issue:6
Number of Words:4000
Translation or Not:No
Date of Publication:2023-06
Release Time:2024-05-15