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Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates

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Affiliation of Author(s):新一代半导体材料研究院

Journal:IEEE Electron Device Letters

First Author:Liu, Jinyang

Document Code:1601022276746350593

Volume:43

Issue:12

Page Number:2061-2064

Number of Words:4000

Translation or Not:no

Date of Publication:2022-01-01

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