Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates
Hits:
Institution:新一代半导体材料研究院
Title of Paper:Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates
Journal:IEEE Electron Device Letters
First Author:Liu, Jinyang
Document Code:1601022276746350593
Volume:43
Issue:12
Page Number:2061-2064
Number of Words:4000
Translation or Not:No
Date of Publication:2022-01
Release Time:2024-10-15