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基于离子注入技术修饰的全单晶光纤、制备方法及其数值孔径调控和应用

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Affilication of Author(s):晶体材料研究院

Type of Patent:发明

Application Number:202011207882.0

Number of Inventors:3

Service Invention or Not:no

Publication Date:2022-02-11

Authorization Date:2022-02-11

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