Paper Publications
Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs
2017-12-01 Hits:
Affiliation of Author(s):微电子学院
Journal:Materials Express
All the Authors:xumingsheng,Ji Ziwu,xuxiangang
First Author:吕海燕
Indexed by:Unit Twenty Basic Research
Document Code:61227A255151427C857D6993F9156680
Volume: 7
Issue:6
Page Number:523
Translation or Not:no
Date of Publication:2017-12-01
Date of Publication:2017-12-01
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