Paper Publications
Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs
Release Time:2019-04-14| Hits:
Institution:微电子学院
Title of Paper:Combined effect of the indium content and well width on electroluminescence in InGaN/GaN multiple quantum well-based LEDs
Journal:Materials Express
First Author:吕海燕
All the Authors:徐明升,Ji Ziwu,徐现刚
Document Code:61227A255151427C857D6993F9156680
Volume: 7
Issue:6
Page Number:523
Translation or Not:No
Date of Publication:2017-12
Release Time:2019-04-14
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