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Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
2017-12-10  Hits:

Affiliation of Author(s):集成电路学院
Journal:Scientific Reports
First Author:冀子武
Document Code:9686BC38A65244CE9952773948B3117C
Issue:7
Number of Words:5
Translation or Not:no
Date of Publication:2017-12-10
Date of Publication:2017-12-10

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