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Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
Release Time:2021-06-02| Hits:

Institution:集成电路学院
Title of Paper:Electroluminescence properties of InGaN/GaN multiple quantum well-based LEDs with different indium contents and different well widths
Journal:Scientific Reports
First Author:冀子武
Document Code:9686BC38A65244CE9952773948B3117C
Issue:7
Number of Words:5
Translation or Not:No
Date of Publication:2017-12
Release Time:2021-06-02