Ji Ziwu
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more+- [1] 王雪松. 关于InGaN/GaN多量子阱结构内量子效率的研究. ACTA PHYSICA SINICA, 343-349, 2024.
- [2] . FBAR电极和压电薄膜制备工艺研究. 《半导体技术》, 第 ４８ 卷, 2024.
- [3] . Research On Etching of Distributed Bragg Reflector. Journal of Physics: Conference Series, 2645, 1, 2024.
- [4] . 深紫外 AlGaN 基多量子阱结构中 载流子辐射复合的局域特征. 发光学报, 44, 1974, 2024.
- [5] 时凯居. Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells. Micro and Nanostructures, 2024.
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