Paper Publications
Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface
Release Time:2019-10-24| Hits:
Institution:物理学院
Title of Paper:Formation of a highly Erbium doped silicon-on-insulator layer by introducing SiOx on or into a silicon surface
Journal:Nucl. Instrum. Meth. B
First Author:Ji Ziwu
All the Authors:Ji Ziwu
Document Code:lw-141361
Translation or Not:No
Date of Publication:2012-02
Release Time:2019-10-24
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