Paper Publications
Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*
2021-04-01 Hits:
Affiliation of Author(s):微电子学院
Journal:Chin. Phys. B
First Author:李睿
Document Code:33D1F97853C944DEA5FA257A4D20BB96
Volume:30
Issue:4
Number of Words:4000
Translation or Not:no
Date of Publication:2021-04-01
Date of Publication:2021-04-01
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