Paper Publications
Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*
Release Time:2022-05-24| Hits:
Institution:集成电路学院
Title of Paper:Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*
Journal:Chinese Physics B
First Author:李睿
Document Code:33D1F97853C944DEA5FA257A4D20BB96
Volume:30
Issue:4
Number of Words:4000
Translation or Not:No
Date of Publication:2021-04
Release Time:2022-05-24
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