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Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN
2022-02-10  Hits:

Affiliation of Author(s):微电子学院
Journal:Journal of Luminescence
First Author:冀子武
Document Code:767B382B05AF4D0E81F1329271E2A172
Issue:1
Number of Words:4000
Translation or Not:no
Date of Publication:2022-02-10
Date of Publication:2022-02-10