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Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
2022-03-28  Hits:

Affiliation of Author(s):微电子学院
Journal:Superlattices Microstruct
First Author:冀子武
Document Code:BA326152AA4D486A8568882C2CB086D6
Issue:2
Number of Words:4850
Translation or Not:no
Date of Publication:2022-03-28
Date of Publication:2022-03-28