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Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
Release Time:2022-05-26| Hits:

Institution:集成电路学院
Title of Paper:Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures
Journal:Superlattices Microstruct
First Author:冀子武
Document Code:BA326152AA4D486A8568882C2CB086D6
Issue:2
Number of Words:4850
Translation or Not:No
Date of Publication:2022-03
Release Time:2022-05-26