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Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells
2016-08-10  Hits:

Affiliation of Author(s):微电子学院
Journal:CHINESE OPTICS LETTERS
Key Words:InGaN;Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells
First Author:Lü, Haiyan
Document Code:1395294347070541825
Volume:14
Issue:8
Page Number:106
Number of Words:4000
Translation or Not:no
Date of Publication:2016-08-10
Date of Publication:2016-08-10

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