Paper Publications
Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells
2023-03-02 Hits:
Affiliation of Author(s):集成电路学院
Journal:Micro and Nanostructures
First Author:时凯居
Document Code:065D97D1198B48C48153BC212A4A0D67
Issue:1
Number of Words:4000
Translation or Not:no
Date of Publication:2023-03-02
Date of Publication:2023-03-02
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