Paper Publications
Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells
Release Time:2024-03-21| Hits:
Institution:集成电路学院
Title of Paper:Inffuence of interface structure in the active region on photoluminescence in InGaN/GaN quantum wells
Journal:Micro and Nanostructures
First Author:时凯居
Document Code:065D97D1198B48C48153BC212A4A0D67
Issue:1
Number of Words:4000
Translation or Not:No
Date of Publication:2023-03
Release Time:2024-03-21
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University