PbQ9x6inFbybUsd2nnnrN5O2v1ohImaVrseMt2VukWlp8vERZUuLTOHdvBja

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Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
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Title of Paper:Electron tunneling effects on radiative recombination in modulation n-doped ZnSe/BeTe type-II quantum wells
Journal:Chin. Phys. B
Volume:19
Page Number:117303
Translation or Not:No
Date of Publication:2010-09
Release Time:2024-09-15

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