Ji Ziwu
Click:
The Last Update Time:..
Paper Publications
- [41] Ji Ziwu. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells. Physica E, 2016.
- [42] Ji Ziwu. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE. Chinese Physics B, 2015.
- [43] Ji Ziwu. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs. Superlattices and Microstructures, 2015.
- [44] Yujun Zheng and Ji Ziwu. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells. Chinese Physics B, 2015.
- [45] xiaohongdi , Ji Ziwu and Ma Jin. Porosity-induced relaxation of strains at different depth of nanoporous GaN stuided using the Z-scan of Raman spectroscopy. JOURNAL OF ALLOYS AND COMPOUNDS, 626, 154, 2015.
- [46] Wang Xue-Song. Internal quantum efficiency of InGaN/GaN multiple quantum well. ACTA PHYSICA SINICA, 63, 127801-1-127801-7, 2014.
- [47] Ji Ziwu and xuxiangang. 关于 InGaN/GaN 多量子阱结构内量子效率的研究 . 物 理 学 报, 2014.
- [48] Ji Ziwu , xiaohongdi and xuxiangang. Photoluminescence of Nanoporous GaN Films Prepared by Electrochemical Etching . CHIN. PHYS. LETT., 2014.
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University