Ji Ziwu
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Paper Publications
- [33] xuxiangang and Ji Ziwu. Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes. Materials Express, 2016.
- [34] Lü, Haiyan. Corrigendum-influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells. CHINESE OPTICS LETTERS, 14, 106, 2016.
- [35] Ji Ziwu. Temperature dependent current–voltage curves study of GaN-based blue light-emitting diode. MATER EXPRESS, 2016.
- [36] Ji Ziwu. Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells. CHINESE OPTICS LETTERS, 2016.
- [37] Ji Ziwu. Influence of the InGaN/GaN quasi-superlattice underlying layer on photoluminescence in InGaN/GaN multiple quantum wells. Physica E, 2016.
- [38] Ji Ziwu. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE. Chinese Physics B, 2015.
- [39] Ji Ziwu. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs. Superlattices and Microstructures, 2015.
- [40] Yujun Zheng and Ji Ziwu. Influences of excitation power and temperature on photoluminescence in phase-separated InGaN quantum wells. Chinese Physics B, 2015.
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