Ji Ziwu
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Patents
一种InGaN/GaN多量子阱基红光LED结构的制备方法
Release Time:2021-11-15| Hits:
Title:一种InGaN/GaN多量子阱基红光LED结构的制备方法
Institution:集成电路学院
Type of Patent:Invent
State of Patent:Authorized patents
Application Number:202010806206.9
Authorization Number:ZL 2020 1 0806206.9
Number of Inventors:3
Service Invention or Not:No
Application Date:2020-08-12
Publication Date:2024-03-26
Authorization Date:2024-03-26
Release Time:2021-11-15
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