Influence of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-13
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- Affiliation of Author(s):
- 物理学院
- Journal:
- Applied physics letters
- All the Authors:
- Meng lingguo
- First Author:
- linzhaojun
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- lw-137957
- Volume:
- 101
- Page Number:
- 113501
- Translation or Not:
- no
- Date of Publication:
- 2012-09-10
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