？？Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- ？？Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
- Journal:
- ？IEEE TRANSACTIONS ON ELECTRON DEVICES
- Document Code:
- lw-183656
- Volume:
- 63
- Issue:
- 4
- Translation or Not:
- No
- Date of Publication:
- 2016-03
- Release Time:
- 2019-04-14
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