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??Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
?IEEE TRANSACTIONS ON ELECTRON DEVICES
Indexed by:
Applied Research
Document Code:
lw-183656
Volume:
63
Issue:
4
Translation or Not:
no
Date of Publication:
2016-03-03