？Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- ？JOURNAL OF APPLIED PHYSICS
- Indexed by:
- Applied Research
- Document Code:
- lw-183658
- Volume:
- 119
- Issue:
- 22
- Translation or Not:
- no
- Date of Publication:
- 2016-06-10
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