？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
Release time:2019-04-14
Hits:
- Affiliation of Author(s):
- 微电子学院
- Journal:
- ？IEEE TRANSACTIONS ON ELECTRON DEVICES
- Indexed by:
- Applied Research
- Document Code:
- lw-183660
- Volume:
- 63
- Issue:
- 10
- Translation or Not:
- no
- Date of Publication:
- 2016-08-12