？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- ？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering
- Journal:
- ？IEEE TRANSACTIONS ON ELECTRON DEVICES
- Document Code:
- lw-183660
- Volume:
- 63
- Issue:
- 10
- Translation or Not:
- No
- Date of Publication:
- 2016-08
- Release Time:
- 2019-04-14