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?Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
?Superlattices and Microstructures
Indexed by:
Applied Research
Document Code:
lw-183663
Volume:
100
Issue:
1
Translation or Not:
no
Date of Publication:
2015-09-29