Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- ？Superlattices and Microstructures
- Indexed by:
- Applied Research
- Document Code:
- lw-183664
- Volume:
- 100
- Translation or Not:
- no
- Date of Publication:
- 2015-09-29