Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors
- Journal:
- ？Superlattices and Microstructures
- Document Code:
- lw-183664
- Volume:
- 100
- Translation or Not:
- No
- Date of Publication:
- 2015-09
- Release Time:
- 2019-04-14