Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Modern Physics Letters B
- Document Code:
- lw-183665
- Volume:
- 30
- Issue:
- 35
- Translation or Not:
- No
- Date of Publication:
- 2015-11
- Release Time:
- 2019-04-14