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Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Journal of applied physics
Indexed by:
综合研究
Document Code:
lw-76649
Volume:
99
Issue:
1
Translation or Not:
no
Date of Publication:
2005-11-22