Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
- Journal:
- Journal of applied physics
- Document Code:
- lw-76649
- Volume:
- 99
- Issue:
- 1
- Translation or Not:
- No
- Date of Publication:
- 2005-11
- Release Time:
- 2019-04-14