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Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures

Release time:2019-04-14
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Affiliation of Author(s):
物理学院
Journal:
Applied physics letters
First Author:
linzhaojun
Indexed by:
Unit Twenty Basic Research
Document Code:
lw-79622
Volume:
91
Issue:
17
Page Number:
173507 -1
Translation or Not:
no
Date of Publication:
2007-10-24