Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
Release Time:2019-04-14
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- Institution:
- 物理学院
- Title of Paper:
- Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN/GaN heterostructures
- Journal:
- Applied physics letters
- First Author:
- 林兆军
- Document Code:
- lw-79622
- Volume:
- 91
- Issue:
- 17
- Page Number:
- 173507 -1
- Translation or Not:
- No
- Date of Publication:
- 2007-10
- Release Time:
- 2019-04-14