Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- AIP Advances
- All the Authors:
- linzhaojun
- First Author:
- 刘艳
- Indexed by:
- 综合研究
- Document Code:
- 36506759656F43E3BA7CC3D569527990
- Volume:
- 7
- Issue:
- 8
- Translation or Not:
- no
- Date of Publication:
- 2017-08-01