Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- AIP Advances
- First Author:
- 刘艳
- All the Authors:
- 林兆军
- Document Code:
- 36506759656F43E3BA7CC3D569527990
- Volume:
- 7
- Issue:
- 8
- Translation or Not:
- No
- Date of Publication:
- 2017-08
- Release Time:
- 2019-04-14