A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Superlattices and Microstructures
- All the Authors:
- linzhaojun,Cheng Aijie
- First Author:
- 付晨
- Indexed by:
- 综合研究
- Document Code:
- 886A7F23170748A3BB5EC63AEBE6B0D2
- Volume:
- 113
- Page Number:
- 160
- Translation or Not:
- no
- Date of Publication:
- 2018-01-01