A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures
- First Author:
- 付晨
- All the Authors:
- 林兆军,程爱杰
- Document Code:
- 886A7F23170748A3BB5EC63AEBE6B0D2
- Volume:
- 113
- Page Number:
- 160
- Translation or Not:
- No
- Date of Publication:
- 2018-01
- Release Time:
- 2019-04-14