The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Applied Physics A-Materials Science & Processing
- All the Authors:
- linzhaojun,Cheng Aijie
- First Author:
- 付晨
- Indexed by:
- 综合研究
- Document Code:
- F32AD635A7794EE79E6E6951FD576DD1
- Volume:
- 124
- Issue:
- 4
- Translation or Not:
- no
- Date of Publication:
- 2018-04-01