The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation
- Journal:
- Applied Physics A-Materials Science & Processing
- First Author:
- 付晨
- All the Authors:
- 林兆军,程爱杰
- Document Code:
- F32AD635A7794EE79E6E6951FD576DD1
- Volume:
- 124
- Issue:
- 4
- Translation or Not:
- No
- Date of Publication:
- 2018-04
- Release Time:
- 2019-04-14