Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Chinese Physics B
- First Author:
- 刘艳
- All the Authors:
- 林兆军
- Document Code:
- C35C3AC632D94246822701F80872F058
- Volume:
- 26
- Issue:
- 9
- Translation or Not:
- No
- Date of Publication:
- 2017-09
- Release Time:
- 2019-04-14