Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Applied physics A
- Indexed by:
- 综合研究
- Document Code:
- lw-164557
- Volume:
- 116
- Translation or Not:
- no
- Date of Publication:
- 2014-04-04