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Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Applied physics A
Indexed by:
综合研究
Document Code:
lw-164557
Volume:
116
Translation or Not:
no
Date of Publication:
2014-04-04