Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
- Journal:
- Applied physics A
- Document Code:
- lw-164557
- Volume:
- 116
- Translation or Not:
- No
- Date of Publication:
- 2014-04
- Release Time:
- 2019-04-14