Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Release time:2019-04-14
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Chinese Physics B
- Indexed by:
- 综合研究
- Document Code:
- lw-164566
- Volume:
- 23
- Translation or Not:
- no
- Date of Publication:
- 2014-10-10
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