Effects of GaN cap layer thickness on an AlN/GaN heterostructure
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Effects of GaN cap layer thickness on an AlN/GaN heterostructure
- Journal:
- Chinese Physics B
- Document Code:
- lw-164566
- Volume:
- 23
- Translation or Not:
- No
- Date of Publication:
- 2014-10
- Release Time:
- 2019-04-14
- Prev One:The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
- Next One:Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors