The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- The influence of the channel electric field distribution on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
- Journal:
- Journal of Semiconductors
- Document Code:
- lw-164576
- Volume:
- 35
- Issue:
- 12
- Translation or Not:
- No
- Date of Publication:
- 2014-07
- Release Time:
- 2019-04-14