A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- A study of the impact of gate metals on the performance of AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Applied physics letters
- Document Code:
- lw-173243
- Volume:
- 107
- Translation or Not:
- No
- Date of Publication:
- 2015-09
- Release Time:
- 2019-04-14