A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors
- Journal:
- Superlattices and Microstructures,
- Document Code:
- lw-173260
- Volume:
- 79
- Translation or Not:
- No
- Date of Publication:
- 2014-12
- Release Time:
- 2019-04-14