Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors
Release time:2019-04-14
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- Affiliation of Author(s):
- 数学学院
- Journal:
- Superlattices and Microstructures
- All the Authors:
- Cheng Aijie,linzhaojun
- First Author:
- liuhuan
- Indexed by:
- Unit Twenty Basic Research
- Document Code:
- F9BB185E29D949D494A8B8F21346A6EF
- Volume:
- 103
- Page Number:
- 113
- Translation or Not:
- no
- Date of Publication:
- 2017-03-01