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Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-04-14
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Affiliation of Author(s):
微电子学院
Journal:
Journal of applied physics
All the Authors:
linzhaojun
First Author:
cuipeng
Indexed by:
综合研究
Document Code:
F23E801B38C847F2A09CFE3045EEA09F
Volume:
122
Issue:
12
Translation or Not:
no
Date of Publication:
2017-09-28