Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
Release Time:2019-04-14
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- Institution:
- 微电子学院
- Title of Paper:
- Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors
- Journal:
- Journal of applied physics
- First Author:
- 崔鹏
- All the Authors:
- 林兆军
- Document Code:
- F23E801B38C847F2A09CFE3045EEA09F
- Volume:
- 122
- Issue:
- 12
- Translation or Not:
- No
- Date of Publication:
- 2017-09
- Release Time:
- 2019-04-14