Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
Release Time:2019-10-23
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- Institution:
- 微电子学院
- Title of Paper:
- Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
- Journal:
- IEEE Transactions on Electron Devices
- First Author:
- 杨铭
- All the Authors:
- 林兆军
- Document Code:
- lw-183656
- Volume:
- 63
- Issue:
- 4
- Page Number:
- 1471
- Translation or Not:
- No
- Date of Publication:
- 2016-03
- Release Time:
- 2019-10-23