Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor
Release Time:2019-10-23
Hits:
- Institution:
- 微电子学院
- Title of Paper:
- Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor
- Journal:
- Journal of applied physics
- First Author:
- 杨铭
- All the Authors:
- 林兆军
- Document Code:
- lw-183658
- Volume:
- 119
- Issue:
- 22
- Page Number:
- 224501
- Translation or Not:
- No
- Date of Publication:
- 2016-06
- Release Time:
- 2019-10-23