Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor
- Journal:
- Chinese Physics B
- First Author:
- 于英霞
- All the Authors:
- 林兆军
- Document Code:
- lw-145402
- Volume:
- 22
- Issue:
- 6
- Translation or Not:
- No
- Date of Publication:
- 2012-11
- Release Time:
- 2019-10-24