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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Chinese Physics B
All the Authors:
linzhaojun
First Author:
于英霞
Indexed by:
综合研究
Document Code:
lw-145402
Volume:
22
Issue:
6
Translation or Not:
no
Date of Publication:
2012-11-26