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Influence of polarization Coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Physica E
All the Authors:
linzhaojun
First Author:
栾崇彪
Indexed by:
综合研究
Document Code:
lw-164550
Volume:
62
Page Number:
76
Number of Words:
3
Translation or Not:
no
Date of Publication:
2014-05-06