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A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Superlattices and Microstructures
All the Authors:
linzhaojun,Cheng Aijie
First Author:
付晨
Indexed by:
综合研究
Document Code:
886A7F23170748A3BB5EC63AEBE6B0D2
Volume:
113
Page Number:
160
Translation or Not:
no
Date of Publication:
2018-01-01