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Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
微电子学院
Journal:
Journal of Physics and Chemistry of Solids
All the Authors:
linzhaojun
First Author:
杨铭
Indexed by:
综合研究
Document Code:
0F4AB58D786441D79979457A0C072E99
Volume:
123
Page Number:
223
Translation or Not:
no
Date of Publication:
2018-12-01