Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors
Release time:2019-10-24
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- Affiliation of Author(s):
- 微电子学院
- Journal:
- Journal of Physics and Chemistry of Solids
- All the Authors:
- linzhaojun
- First Author:
- 杨铭
- Indexed by:
- 综合研究
- Document Code:
- 0F4AB58D786441D79979457A0C072E99
- Volume:
- 123
- Page Number:
- 223
- Translation or Not:
- no
- Date of Publication:
- 2018-12-01
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