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Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors

Release Time:2019-10-24
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Institution:
集成电路学院
Title of Paper:
Determination of the polarization and strain distribution in AlGaN/GaN heterostructure field-effect transistors
Journal:
Journal of Physics and Chemistry of Solids
First Author:
杨铭
All the Authors:
林兆军
Document Code:
0F4AB58D786441D79979457A0C072E99
Volume:
123
Page Number:
223
Translation or Not:
No
Date of Publication:
2018-12
Release Time:
2019-10-24