Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
- Journal:
- Applied physics A
- First Author:
- 栾崇彪
- All the Authors:
- 林兆军
- Document Code:
- lw-164557
- Volume:
- 116
- Page Number:
- 2065
- Number of Words:
- 3
- Translation or Not:
- No
- Date of Publication:
- 2014-04
- Release Time:
- 2019-10-24