Enhanced effect of side-Ohmic contact processing on the 2DEG electron density and electron mobility of In0.17Al0.83N/AlN/GaN heterostructure field-effect transistors
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Applied physics A
- All the Authors:
- linzhaojun
- First Author:
- 栾崇彪
- Indexed by:
- 综合研究
- Document Code:
- lw-164557
- Volume:
- 116
- Page Number:
- 2065
- Number of Words:
- 3
- Translation or Not:
- no
- Date of Publication:
- 2014-04-04