Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Release time:2019-10-24
Hits:
- Affiliation of Author(s):
- 集成电路学院
- Journal:
- Applied Physics A: Materials Science and Processing
- All the Authors:
- linzhaojun
- First Author:
- 赵景涛
- Indexed by:
- 综合研究
- Document Code:
- lw-164527
- Volume:
- 121
- Page Number:
- 1271
- Number of Words:
- 2
- Translation or Not:
- no
- Date of Publication:
- 2015-09-29