Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
Release Time:2019-10-24
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- Institution:
- 集成电路学院
- Title of Paper:
- Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
- Journal:
- Applied Physics A: Materials Science and Processing
- First Author:
- 赵景涛
- All the Authors:
- 林兆军
- Document Code:
- lw-164527
- Volume:
- 121
- Page Number:
- 1271
- Number of Words:
- 2
- Translation or Not:
- No
- Date of Publication:
- 2015-09
- Release Time:
- 2019-10-24