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Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
Applied Physics A: Materials Science and Processing
All the Authors:
linzhaojun
First Author:
赵景涛
Indexed by:
综合研究
Document Code:
lw-164527
Volume:
121
Page Number:
1271
Number of Words:
2
Translation or Not:
no
Date of Publication:
2015-09-29