Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
Release Time:2019-10-24
Hits:
- Institution:
- 集成电路学院
- Title of Paper:
- Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures
- Journal:
- JOURNAL OF APPLIED PHYSICS
- First Author:
- 林兆军
- All the Authors:
- 林兆军
- Document Code:
- lw-76649
- Volume:
- 99
- Issue:
- 1
- Number of Words:
- 3500
- Translation or Not:
- No
- Date of Publication:
- 2005-11
- Release Time:
- 2019-10-24