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Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures

Release time:2019-10-24
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Affiliation of Author(s):
集成电路学院
Journal:
JOURNAL OF APPLIED PHYSICS
All the Authors:
linzhaojun
First Author:
linzhaojun
Indexed by:
综合研究
Document Code:
lw-76649
Volume:
99
Issue:
1
Number of Words:
3500
Translation or Not:
no
Date of Publication:
2005-11-22