Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates
Release Time:2019-10-24
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- Institution:
- 物理学院
- Title of Paper:
- Growth process from amorphous GaN to polycrystalline GaN on Si (111) substrates
- Journal:
- VACUUM
- First Author:
- 肖洪地
- All the Authors:
- Jianqiang Liu,林兆军,肖洪地
- Document Code:
- lw-77690
- Volume:
- 83
- Issue:
- 11
- Page Number:
- 1393
- Number of Words:
- 3000
- Translation or Not:
- No
- Date of Publication:
- 2009-07
- Release Time:
- 2019-10-24