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Polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Release time:2019-10-24
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Affiliation of Author(s):
物理学院
Journal:
APPLIED PHYSICS LETTERS
All the Authors:
linzhaojun,Meng lingguo
First Author:
linzhaojun
Document Code:
lw-96689
Volume:
98
Issue:
12
Page Number:
123512-1
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2011-03-25