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Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics

Release time:2019-10-24
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Affiliation of Author(s):
物理学院
Journal:
APPLIED PHYSICS LETTERS
All the Authors:
linzhaojun,Meng lingguo
First Author:
linzhaojun
Document Code:
lw-96700
Volume:
99
Issue:
12
Page Number:
123504
Number of Words:
3000
Translation or Not:
no
Date of Publication:
2011-09-22