Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward Current-Voltage characteristics
Release time:2019-10-24
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- Affiliation of Author(s):
- 物理学院
- Journal:
- APPLIED PHYSICS LETTERS
- All the Authors:
- linzhaojun,Meng lingguo
- First Author:
- linzhaojun
- Document Code:
- lw-96700
- Volume:
- 99
- Issue:
- 12
- Page Number:
- 123504
- Number of Words:
- 3000
- Translation or Not:
- no
- Date of Publication:
- 2011-09-22