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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Release time:2019-10-24
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Affiliation of Author(s):
物理学院
Journal:
JOURNAL OF APPLIED PHYSICS
All the Authors:
linzhaojun,Meng lingguo
First Author:
linzhaojun
Document Code:
lw-96709
Volume:
109
Issue:
7
Page Number:
074512-1
Number of Words:
3500
Translation or Not:
no
Date of Publication:
2011-04-08