Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics
Release time:2019-10-24
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- Affiliation of Author(s):
- 物理学院
- Journal:
- JOURNAL OF APPLIED PHYSICS
- All the Authors:
- linzhaojun,Meng lingguo
- First Author:
- linzhaojun
- Document Code:
- lw-96709
- Volume:
- 109
- Issue:
- 7
- Page Number:
- 074512-1
- Number of Words:
- 3500
- Translation or Not:
- no
- Date of Publication:
- 2011-04-08